FDMS3606AS Datasheet Asymmetric Dual N-channel MOSFET

Manufacturer: onsemi

Overview: FDMS3606AS PowerTrench® Power Stage FDMS3606AS PowerTrench® Power Stage 30 V Asymmetric Dual N-Channel.

Datasheet Details

Part number	FDMS3606AS
Manufacturer	onsemi
File Size	926.29 KB
Description	Asymmetric Dual N-Channel MOSFET
Datasheet	FDMS3606AS-ONSemiconductor.pdf

This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Q1: N-Channel.
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A.
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel.
Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A.
Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A.
Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
RoHS Compliant General Descr.

Brand Logo	Part Number	Description	Manufacturer
	FDMS3606AS	MOSFET	Fairchild Semiconductor
	FDMS3606S	Asymmetric Dual N-Channel MOSFET	Fairchild Semiconductor

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