FDMS3606S Datasheet | Fairchild Semiconductor

FDMS3606S PowerTrench® Power Stage PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel - Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A - Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel - Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A - Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A - Low inductance packaging shortens rise/fall times, resulting in lower switching losses - MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing - RoHS pliant December 2012 General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally...