FDMS3606AS Description
N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS...
FDMS3606AS Key Features
- Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
- Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
- Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A
- Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
- RoHS pliant