FDMS3606AS Datasheet and Specifications PDF

The FDMS3606AS is a Asymmetric Dual N-Channel MOSFET.

Key Specifications

Mount TypeSurface Mount
Pins8
Height1.05 mm
Length5 mm
Width6 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberFDMS3606AS Datasheet
Manufactureronsemi
Overview This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The co. Q1: N-Channel
* Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel
* Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A
* Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A
* Low inductance packaging shortens rise/fall times, resulting in lower switching.
Part NumberFDMS3606AS Datasheet
DescriptionMOSFET
ManufacturerFairchild Semiconductor
Overview Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A „ Max rDS(on) = 2.8 mΩ at VGS. General Description Q1: N-Channel
* Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel
* Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A
* Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A
* Low inductance packaging shortens rise/fall times, result.

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