Datasheet Summary
FDMS3626S PowerTrench® Power Stage
December 2011
PowerTrench® Power Stage
25V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
- Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A
- Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A
Q2: N-Channel
- Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A
- Max rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A
- Low inductance packaging shortens rise/fall times, resulting in lower switching losses
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
- RoHS pliant
General Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been...