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FDMS4435BZ Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Applications „ High side in DC-DC Buck Converters „ Notebook battery power management „ Load switch in Notebook Top Bottom Pin 1 S S S G D5 D6 4G 3

Overview

FDMS4435BZ P-Channel Power Trench® MOSFET FDMS4435BZ P-Channel PowerTrench® MOSFET -30 V, -18 A, 20.

Key Features

  • Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A.
  • Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A.
  • Extended VGSS range (-25 V) for battery.