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FDMS4435BZ - P-Channel MOSFET

Description

This P Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance.

Features

  • Max rDS(on) = 20 mW at VGS =.
  • 10 V, ID =.
  • 9.0 A.
  • Max rDS(on) = 37 mW at VGS =.
  • 4.5 V, ID =.
  • 6.5 A.
  • Extended VGSS range (.
  • 25 V) for battery.

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Full PDF Text Transcription

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MOSFET – P-Channel, POWERTRENCH) -30 V, -18 A, 20 mW FDMS4435BZ General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • Max rDS(on) = 20 mW at VGS = −10 V, ID = −9.0 A • Max rDS(on) = 37 mW at VGS = −4.5 V, ID = −6.
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