Datasheet Summary
FDMS4435BZ P-Channel Power Trench® MOSFET
P-Channel PowerTrench® MOSFET
-30 V, -18 A, 20 mΩ
Features
- Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A
- Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A
- Extended VGSS range (-25 V) for battery applications
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- HBM ESD protection level >7 kV typical (Note 4)
- 100% UIL tested
- Termination is Lead-free and RoHS pliant
October 2014
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This...
