Download FDMS6681Z Datasheet PDF
FDMS6681Z datasheet preview
FDMS6681Z page 2
Page 2
FDMS6681Z page 3
Page 3

FDMS6681Z Key Features

  • Max rDS(on) = 3.2 m: at VGS = -10 V, ID = -21.1 A
  • Max rDS(on) = 5.0 m: at VGS = -4.5 V, ID = -15.7 A
  • Advanced Package and Silicon bination for low rDS(on)
  • HBM ESD protection level of 8kV typical(note 3)
  • MSL1 robust package design
  • RoHS pliant

Other FDMS6681Z Datasheets

Manufacturer Part Number Description
ON Semiconductor Logo onsemi FDMS6681Z P-Channel MOSFET

View all FDMS6681Z datasheets →

FDMS6681Z Description

The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) and ESD protection. -3 V mV/°C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1 MHz 7803 1540 1345 10380 2050 2020 pF pF pF Switching Characteristics...