Datasheet Details
| Part number | FDMS6681Z |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 301.19 KB |
| Description | P-Channel MOSFET |
| Datasheet | FDMS6681Z_FairchildSemiconductor.pdf |
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Overview: .DataSheet.co.kr FDMS6681Z P-Channel PowerTrench® MOSFET May 2009 FDMS6681Z P-Channel PowerTrench® MOSFET -30 V, -49 A, 3.
| Part number | FDMS6681Z |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 301.19 KB |
| Description | P-Channel MOSFET |
| Datasheet | FDMS6681Z_FairchildSemiconductor.pdf |
|
|
|
The FDMS6681Z has been designed to minimize losses in load switch applications.
Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) and ESD protection.
Applications Load Switch in Notebook and Server Notebook Battery Pack Power Management Top Bottom S Pin 1 S D S G D D D D D D 5 6 7 8 4 3 2 1 G S S S D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings -30 ±25 -49 -116 -21.1 -90 73 2.5 -55 to +150 W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.7 50 °C/W Package Marking and Ordering Information Device Marking FDMS6681Z Device FDMS6681Z Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2009 Fairchild Semiconductor Corporation FDMS6681Z Rev.C4 1 .fairchildsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| FDMS6681Z | P-Channel MOSFET | ON Semiconductor |
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