FDMS7560S Datasheet | Fairchild Semiconductor

Features General Description - Max r DS(on) = 1.45 mΩ at VGS = 10 V, ID = 30 A - Max r DS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 26 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency - Sync FET Schottky Body Diode - MSL1 robust package design - 100% UIL tested - Ro HS pliant The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications - Synchronous Rectifier for Synchronous Buck Converters - Notebook - Server - Tele - High Efficiency DC-DC Switch Mode Power Supplies Top Bottom Pin 1 D5 D6 4G 3S Power 56 D D DD MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics...