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FDMS7560S - N-Channel PowerTrench SyncFET

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Description

Max rDS(on) = 1.45 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 26 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL test

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Datasheet Details

Part number FDMS7560S
Manufacturer Fairchild Semiconductor
File Size 464.05 KB
Description N-Channel PowerTrench SyncFET
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FDMS7560S N-Channel PowerTrench® SyncFETTM October 2014 FDMS7560S N-Channel PowerTrench® SyncFETTM 25 V, 49 A, 1.45 mΩ Features General Description „ Max rDS(on) = 1.45 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 26 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
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