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FDMS7558S - N-Channel MOSFET

Description

The FDMS7558S has been designed to minimize losses in power conversion application.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Features

  • Max rDS(on) = 1.25 mΩ at VGS = 10 V, ID = 32 A.
  • Max rDS(on) = 1.75 mΩ at VGS = 4.5 V, ID = 28 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • SyncFET Schottky Body Diode.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant General.

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Datasheet Details

Part number FDMS7558S
Manufacturer Fairchild Semiconductor
File Size 337.24 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS7558S Datasheet
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FDMS7558S N-Channel PowerTrench®SyncFET FDMS7558S N-Channel PowerTrench® SyncFETTM 25 V, 49 A, 1.25 mΩ October 2014 Features „ Max rDS(on) = 1.25 mΩ at VGS = 10 V, ID = 32 A „ Max rDS(on) = 1.75 mΩ at VGS = 4.5 V, ID = 28 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description The FDMS7558S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
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