FDMS7602S Description
N-Channel Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 12 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 14 A RoHS pliant This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck...
FDMS7602S Key Features
- Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 12 A
- Max rDS(on) = 12 mΩ at VGS = 4.5 V, ID = 10 A
- Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A
- Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 14 A
- RoHS pliant
FDMS7602S Applications
- Continuous -Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range