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FDMS7650 - N-Channel PowerTrench MOSFET

General Description

Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to mi

Key Features

  • General.

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FDMS7650 N-Channel PowerTrench® MOSFET February 2016 FDMS7650 N-Channel PowerTrench® MOSFET 30 V, 267 A, 0.99 mΩ Features General Description „ Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A „ Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A „ Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).