FDMS7650
Overview
Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).
