FDMS7650 Overview
Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A Advanced Package and Silicon bination for Low rDS(on) and High Efficiency This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low...
FDMS7650 Key Features
- Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A
- Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A
- Advanced Package and Silicon bination for Low rDS(on) and High Efficiency
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS pliant
