Datasheet4U Logo Datasheet4U.com

FDMS7658AS - N-Channel MOSFET

General Description

The FDMS7658AS has been designed to minimize losses in power conversion application.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Key Features

  • Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A.
  • Max rDS(on) = 2.2 mΩ at VGS = 7 V, ID = 26 A.
  • Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMS7658AS N-Channel MOSFET Fairchild Semiconductor
FDMS7650 N-Channel PowerTrench MOSFET Fairchild Semiconductor
FDMS7650DC N-Channel Dual Cool 56 PowerTrench MOSFET Fairchild Semiconductor
FDMS7656AS N-Channel MOSFET Fairchild Semiconductor
FDMS7600AS Dual N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDMS7650DC N-Channel MOSFET
FDMS7620S Dual N-Channel MOSFET
FDMS7694 N-Channel MOSFET
FDMS003N08C N-Channel MOSFET
FDMS007N08LC N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMS7658AS N-Channel PowerTrench® SyncFETTM FDMS7658AS N-Channel PowerTrench® SyncFETTM 30 V, 176 A, 1.9 mΩ Features „ Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A „ Max rDS(on) = 2.2 mΩ at VGS = 7 V, ID = 26 A „ Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency General Description The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.