dual n-channel powertrench mosfet.
General Description
Q1: N-Channel
* Max rDS(on) = 11.4 mΩ at VGS = 10 V, ID = 11.5 A
* Max rDS(on) = 15.7 mΩ at VGS = 4.5 V, ID = 10 A
Q2: N-Channel
* Max r.
* Computing
* Communications
* General Purpose Point of Load
* Notebook Charger
S2 S2 S2 G2
S1/D2
D1 D.
Q1: N-Channel
* Max rDS(on) = 11.4 mΩ at VGS = 10 V, ID = 11.5 A
* Max rDS(on) = 15.7 mΩ at VGS = 4.5 V, ID = 10 A
Q2: N-Channel
* Max rDS(on) = 11.6 mΩ at VGS = 10 V, ID = 12 A
* Max rDS(on) = 17.2 mΩ at VGS = 4.5 V, ID = 9.5 A
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