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FDMS7606 - Dual N-Channel PowerTrench MOSFET

Description

Q1: N-Channel Max rDS(on) = 11.4 mΩ at VGS = 10 V, ID = 11.5 A Max rDS(on) = 15.7 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel Max rDS(on) = 11.6 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 17.2 mΩ at VGS = 4.5 V, ID = 9.5 A RoHS Compliant This device

Features

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FDMS7606 Dual N-Channel PowerTrench® MOSFET May 2011 FDMS7606 Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 12 A, 11.4 mΩ Q2: 30 V, 22 A, 11.6 mΩ Features General Description Q1: N-Channel „ Max rDS(on) = 11.4 mΩ at VGS = 10 V, ID = 11.5 A „ Max rDS(on) = 15.7 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel „ Max rDS(on) = 11.6 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 17.2 mΩ at VGS = 4.5 V, ID = 9.5 A „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
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