FDMS7606 Description
N-Channel Max rDS(on) = 11.4 mΩ at VGS = 10 V, ID = 11.5 A Max rDS(on) = 15.7 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel Max rDS(on) = 11.6 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 17.2 mΩ at VGS = 4.5 V, ID = 9.5 A RoHS pliant This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally connected to enable easy placement and routing of synchronous buck...
FDMS7606 Key Features
- Max rDS(on) = 11.4 mΩ at VGS = 10 V, ID = 11.5 A
- Max rDS(on) = 15.7 mΩ at VGS = 4.5 V, ID = 10 A
- Max rDS(on) = 11.6 mΩ at VGS = 10 V, ID = 12 A
- Max rDS(on) = 17.2 mΩ at VGS = 4.5 V, ID = 9.5 A
- RoHS pliant
FDMS7606 Applications
- Continuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Ope