FDMS8350L
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Key Features
- Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A
- Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
