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FDMS8350L, FDMS8050L - MOSFET

FDMS8350L Description

FDMS8350L N-Channel PowerTrench® MOSFET March 2015 FDMS8350L N-Channel PowerTrench® MOSFET 40 V, 290 A, 0.85 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-s.

FDMS8350L Features

* Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A
* Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* MSL1 robust package design
* 100% UIL tested
* RoHS Compliant General De

FDMS8350L Applications

* Primary DC-DC MOSFET
* Secondary Synchronous Rectifier
* Load Switch Top Pin 1 Bottom S Pin 1 S S G S S D D D D Power 56 S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: FDMS8350L, FDMS8050L. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
FDMS8350L, FDMS8050L
Manufacturer
Fairchild Semiconductor
File Size
218.30 KB
Datasheet
FDMS8050L-FairchildSemiconductor.pdf
Description
MOSFET
Note
This datasheet PDF includes multiple part numbers: FDMS8350L, FDMS8050L.
Please refer to the document for exact specifications by model.

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MOSFET Fairchild Semiconductor
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