FDMS8460 Key Features
- Max rDS(on) = 2.2m: at VGS = 10V, ID = 25A
- Max rDS(on) = 3.0m: at VGS = 4.5V, ID = 21.7A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
- 100% UIL tested
- DC Conversion
- RoHS pliant
| Manufacturer | Part Number | Description |
|---|---|---|
| FDMS8460 | N-Channel MOSFET |