Datasheet Details
| Part number | FDMS8460 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 315.17 KB |
| Description | MOSFET |
| Datasheet |
 FDMS8460 Datasheet
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| Part number | FDMS8460 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 315.17 KB |
| Description | MOSFET |
| Datasheet |
FDMS8460 Datasheet
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|
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Max rDS(on) = 2.2m: at VGS = 10V, ID = 25A Max rDS(on) = 3.0m: at VGS = 4.5V, ID = 21.7A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application DC - DC Conversion RoHS Compliant Top Bottom Pin 1 S S S G D D D D Power 56 S S S G D D D D MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy P
FDMS8460 N-Channel Power Trench® MOSFET October 2014 FDMS8460 N-Channel Power Trench® MOSFET 40V, 49A, 2.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMS8460 | N-Channel MOSFET | ON Semiconductor |
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