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Fairchild Semiconductor Electronic Components Datasheet

FDMS86200DC Datasheet

MOSFET

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July 2015
FDMS86200DC
N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET
150 V, 40 A, 17 mΩ
Features
General Description
„ Shielded Gate MOSFET Technology
„ Dual CoolTM Top Side Cooling PQFN package
„ Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 9.3 A
„ Max rDS(on) = 25 mΩ at VGS = 6 V, ID = 7.8 A
„ High performance technology for extremely low rDS(on)
„ 100% UIL tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. Advancements in both
silicon and Dual CoolTM package technologies have been
combined to offer the lowest rDS(on) while maintaining excellent
switching performance by extremely low Junction-to-Ambient
thermal resistance.
Applications
„ Primary MOSFET in DC - DC converters
„ Secondary Synchronous rectifier
„ Load switch
Pin 1
D
D
D
D
S
S
D
D
G
S
S
S
Pin 1
Top
Dual CoolTM 56
Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S
G
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
D
D
Ratings
150
±20
40
9.3
100
294
125
3.2
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
2.5
1.0
38
81
16
23
11
°C/W
Device Marking
86200
Device
FDMS86200DC
Package
Dual CoolTM 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86200DC Rev. 1.4
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDMS86200DC Datasheet

MOSFET

No Preview Available !

Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25°C
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 9.3 A
VGS = 6 V, ID = 7.8 A
VGS = 10 V, ID = 9.3 A, TJ = 125 °C
VDS = 10 V, ID = 9.3 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 75 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 75 V , ID = 9.3 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 6 V VDD = 75 V
ID = 9.3 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 9.3 A
VGS = 0 V, IS = 2.6 A
(Note 2)
(Note 2)
IF = 9.3 A, di/dt = 100 A/μs
Min
150
2.0
0.1
Typ
105
3.3
-11
14
17
29
32
2110
205
8.1
1.5
16
4
23
5
30
19
9.7
5.6
0.8
0.7
79
126
Max Units
V
mV/°C
1
±100
μA
nA
4.0 V
mV/°C
17
25 mΩ
35
S
2955
290
15
3.0
pF
pF
pF
Ω
29 ns
10 ns
37 ns
10 ns
42 nC
27 nC
nC
nC
1.3
V
1.2
126 ns
176 nC
©2012 Fairchild Semiconductor Corporation
FDMS86200DC Rev. 1.4
2
www.fairchildsemi.com


Part Number FDMS86200DC
Description MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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