Datasheet Summary
FDMS86200DC N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET
July 2015
N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET
150 V, 40 A, 17 mΩ
Features
General Description
- Shielded Gate MOSFET Technology
- Dual CoolTM Top Side Cooling PQFN package
- Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 9.3 A
- Max rDS(on) = 25 mΩ at VGS = 6 V, ID = 7.8 A
- High performance technology for extremely low rDS(on)
- 100% UIL tested
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. Advancements in both silicon and Dual CoolTM package technologies have been bined to...
