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FDMS86200 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 150 V, 35 A, 18.

General Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.

This process has been optimized for the on−state resistance and yet maintain superior switching performance.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 18 mW at VGS = 10 V, ID = 9.6 A.
  • Max RDS(on) = 21 mW at VGS = 6 V, ID = 8.8 A.
  • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • RoHS Compliant.

FDMS86200 Distributor & Price

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Similar Datasheet

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