FDMS86200 - N-Channel MOSFET

onsemi

General Description

This N

POWERTRENCH® process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

Key Features

Shielded Gate MOSFET Technology.
Max RDS(on) = 18 mW at VGS = 10 V, ID = 9.6 A.
Max RDS(on) = 21 mW at VGS = 6 V, ID = 8.8 A.
Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency.
MSL1 Robust Package Design.
100% UIL Tested.
RoHS Compliant.

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FDMS86200 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMS86200
Manufacturer	onsemi
File Size	478.46 KB
Description	N-Channel MOSFET
Datasheet	FDMS86200 Datasheet

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 150 V, 35 A, 18 mW FDMS86200 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 18 mW at VGS = 10 V, ID = 9.6 A • Max RDS(on) = 21 mW at VGS = 6 V, ID = 8.