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FDMS86200 - N-Channel MOSFET

Product Overview

ON Semiconductor

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FDMS86200 N-Channel MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – FDMS86200

Datasheet Details

Part number	FDMS86200
Manufacturer	ON Semiconductor
File Size	478.46 KB
Description	N-Channel MOSFET
Datasheet	FDMS86200 Datasheet
Additional preview pages of the FDMS86200 datasheet.

Product details

Description

This N

POWERTRENCH® process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

Features

Shielded Gate MOSFET Technology.
Max RDS(on) = 18 mW at VGS = 10 V, ID = 9.6 A.
Max RDS(on) = 21 mW at VGS = 6 V, ID = 8.8 A.
Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency.
MSL1 Robust Package Design.
100% UIL Tested.
RoHS Compliant.

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Published: Oct 15, 2019 |