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FDMS86200DC - MOSFET

General Description

Shielded Gate MOSFET Technology Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 9.3 A Max rDS(on) = 25 mΩ at VGS = 6 V, ID = 7.8 A High performance technology for extremely low rDS(on) 100% UIL tested

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS86200DC N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET July 2015 FDMS86200DC N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET 150 V, 40 A, 17 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 9.3 A „ Max rDS(on) = 25 mΩ at VGS = 6 V, ID = 7.8 A „ High performance technology for extremely low rDS(on) „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.