FDMS86200DC
Overview
Shielded Gate MOSFET Technology Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 9.3 A Max rDS(on) = 25 mΩ at VGS = 6 V, ID = 7.8 A High performance technology for extremely low rDS(on) 100% UIL tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
