Datasheet Summary
FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET
October 2014
N-Channel Shielded Gate PowerTrench® MOSFET
120 V, 49 A, 11.5 mΩ
Features
General Description
- Shielded Gate MOSFET Technology
- Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A
- Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching...