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FDMS86255 Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Applications „ OringFET / Load Switching „ Synchronous rectification „ DC-DC Conversion „ RoHS Compliant Top Pin 1 Bottom S Pin 1 S S G S S D D D D Power 56 S G D D D D MOSFET Maximum Ratings TA = 25 °C unless other

Overview

FDMS86255 N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDMS86255 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 45 A, 12.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A.
  • Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • MSL1 robust package design.
  • 100% UIL tested General.

📁 Similar Datasheet

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