FDMS86255 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A
- Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A
- Advanced Package and Silicon bination for low rDS(on)
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL tested
