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FDMS86255 - N-Channel MOSFET

General Description

This N

POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 12.4 mW at VGS = 10 V, ID = 10 A.
  • Max RDS(on) = 15.5 mW at VGS = 6 V, ID = 8 A.
  • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency.
  • Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • RoHS Compliant.
  • These Device is Halogen Free.

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Datasheet Details

Part number FDMS86255
Manufacturer onsemi
File Size 423.93 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS86255 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com MOSFET – N-Channel, Shielded Gate, POWERTRENCH® 150 V, 62 A, 12.4 mW FDMS86255 Description This N−Channel MOSFET is produced using onsemi advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 12.4 mW at VGS = 10 V, ID = 10 A • Max RDS(on) = 15.