FDMS86255 Description
This N−Channel MOSFET is produced using onsemi advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.
FDMS86255 Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 12.4 mW at VGS = 10 V, ID = 10 A
- Max RDS(on) = 15.5 mW at VGS = 6 V, ID = 8 A
- Advanced Package and Silicon bination for Low RDS(on) and
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS pliant
- These Device is Halogen Free