FDMS86255ET150
FDMS86255ET150 is manufactured by Fairchild Semiconductor.
FDMS86255ET150 N-Channel Shielded Gate PowerTrench® MOSFET
January 2015
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 63 A, 12.4 mΩ
Features
- Extended TJ rating to 175°C
- Shielded Gate MOSFET Technology
- Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A
- Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate...
