FDMS86255ET150 - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMS86255ET150
Manufacturer	Fairchild Semiconductor
File Size	221.73 KB
Description	MOSFET
Datasheet	FDMS86255ET150 Datasheet
Additional preview pages of the FDMS86255ET150 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. OringFET / Load Switching Synchronous rectification DC-DC Conversion Top Pin 1 Bottom S Pin 1 S S G S S D D D D Power 56 S G D D D D MOSF

Features

Extended TJ rating to 175°C.
Shielded Gate MOSFET Technology.
Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A.
Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
Next generation enhanced body diode technology, engineered for soft recovery.
MSL1 robust package design.
100% UIL tested.
RoHS Compliant General.

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Published: Jan 10, 2017 |