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FDMS86255ET150 - MOSFET

Product Overview

Fairchild Semiconductor

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FDMS86255ET150 MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – FDMS86255ET150

Datasheet Details

Part number	FDMS86255ET150
Manufacturer	Fairchild Semiconductor
File Size	221.73 KB
Description	MOSFET
Datasheet	FDMS86255ET150 Datasheet
Additional preview pages of the FDMS86255ET150 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

OringFET / Load Switching

Features

Extended TJ rating to 175°C.
Shielded Gate MOSFET Technology.
Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A.
Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
Next generation enhanced body diode technology, engineered for soft recovery.
MSL1 robust package design.
100% UIL tested.
RoHS Compliant General.

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Published: Jan 10, 2017 |