FDMS86250 Description
Shielded Gate MOSFET Technology Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.7 A Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.8 A Advanced package and silicon bination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet...
FDMS86250 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.7 A
- Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.8 A
- Advanced package and silicon bination for low rDS(on) and
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant
- DC-DC Conversion
- 55 to +150