Datasheet Details
| Part number | FDMS86252 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 307.88 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDMS86252 Datasheet
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| Part number | FDMS86252 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 307.88 KB |
| Description | N-Channel MOSFET |
| Datasheet |
FDMS86252 Datasheet
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Shielded Gate MOSFET Technology Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A Advanced package and silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.This process has been optimized for the on-state resistance and yet maintain superior switching performance.
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