FDMS86520L Description
Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 13.5 A Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A Advanced package and silicon bination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching...
FDMS86520L Key Features
- Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 13.5 A
- Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
- Advanced package and silicon bination for low rDS(on) and
- MSL1 robust package design
- 100% UIL tested