FDMS86520L
Features
General Description
- Max r DS(on) = 8.2 mΩ at VGS = 10 V, ID = 13.5 A
- Max r DS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
- Advanced package and silicon bination for low r DS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on), fast switching speed and body diode reverse recovery performance.
Applications
- Ro HS pliant
- Primary Switch in isolated DC-DC
- Synchronous Rectifier
- Load Switch
Top
Bottom
Pin 1
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Pulsed
TC = 25 °C TA = 25 °C
Single...
