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Fairchild Semiconductor Electronic Components Datasheet

FDMS86520L Datasheet

N-Channel MOSFET

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FDMS86520L
N-Channel PowerTrench® MOSFET
60 V, 22 A, 8.2 mΩ
April 2011
Features
General Description
„ Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 13.5 A
„ Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
„ Advanced package and silicon combination for low rDS(on) and
high efficiency
„ MSL1 robust package design
„ 100% UIL tested
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ RoHS Compliant
„ Primary Switch in isolated DC-DC
„ Synchronous Rectifier
„ Load Switch
Top Bottom
Pin 1
S
S
S
G
D5
D6
Power 56
D
D
D
D
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
60
±20
22
71
13.5
60
91
69
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.8
50
°C/W
Device Marking
FDMS86520L
Device
FDMS86520L
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS86520L Rev.C
1
www.fairchildsemi.com
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Fairchild Semiconductor Electronic Components Datasheet

FDMS86520L Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
60
V
29 mV/°C
1
±100
μA
nA
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 13.5 A
VGS = 4.5 V, ID = 11.5 A
VGS = 10 V, ID = 13.5 A,
TJ = 125 °C
VDS = 5 V, ID = 13.5 A
1
1.8 3
V
-7 mV/°C
6.7 8.2
9.1 11.7 mΩ
9.6 11.8
51 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 30 V, VGS = 0 V,
f = 1 MHz
3470
625
25
0.6
4615
835
45
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 30 V, ID = 13.5 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 30 V,
ID = 13.5 A
15 27 ns
5.6 11 ns
32 52 ns
3.4 10 ns
45 63 nC
21 30 nC
9.5 nC
4.7 nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A (Note 2)
VGS = 0 V, IS = 13.5 A (Note 2)
0.72 1.2
0.83 1.3
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 13.5 A, di/dt = 100 A/μs
37 60 ns
21 34 nC
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 13.5 A, di/dt = 300 A/μs
30 48 ns
37 59 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 13.5 A, VDD = 54 V, VGS = 10 V.
©2011 Fairchild Semiconductor Corporation
FDMS86520L Rev.C
2
www.fairchildsemi.com


Part Number FDMS86520L
Description N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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