FDMS86540
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Key Features
- Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 20 A
- Max rDS(on) = 4.1 mΩ at VGS = 8 V, ID = 18.5 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL tested
- RoHS compliant May 2015
