FDMS86540 Datasheet | Fairchild Semiconductor

Features - Max r DS(on) = 3.4 mΩ at VGS = 10 V, ID = 20 A - Max r DS(on) = 4.1 mΩ at VGS = 8 V, ID = 18.5 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency - Next generation enhanced body diode technology, engineered for soft recovery - MSL1 robust package design - 100% UIL tested - Ro HS pliant May 2015 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low r DS(on), fast switching speed and body diode reverse recovery performance. Applications - Primary Switch in isolated DC-DC - Synchronous Rectifier - Load Switch Top Bottom Pin 1 S Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 5) (Note 5) (Note 1a) (Note 4) (Note 3) (Note...