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Fairchild Semiconductor Electronic Components Datasheet

FDMS8662 Datasheet

N-Channel PowerTrench MOSFET

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www.DataSheet.co.kr
November 2007
FDMS8662
N-Channel PowerTrench® MOSFET
30V, 49A, 2.0m
tm
Features
General Description
„ Max rDS(on) = 2.0mat VGS = 10V, ID = 28A
„ Max rDS(on) = 3.0mat VGS = 4.5V, ID = 24A
„ Advanced Package and Silicon combination
for low rDS(on) and high efficiency
„ MSL1 robust package design
„ RoHS Compliant
The FDMS8662 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.
Applications
„ Low Side for Synchronous Buck to Power Core Processor
„ Secondary Side Synchronous Rectifier
„ Low Side Switch in POL DC/DC Converter
„ Oring FET/ Load Switch
Pin 1
S
S
S
G
D
D
D
D
Power 56 (Bottom View)
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
49
159
28
200
726
83
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.5
50
°C/W
Device Marking
FDMS8662
Device
FDMS8662
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000units
©2007 Fairchild Semiconductor Corporation
FDMS8662 Rev.C1
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/


Fairchild Semiconductor Electronic Components Datasheet

FDMS8662 Datasheet

N-Channel PowerTrench MOSFET

No Preview Available !

www.DataSheet.co.kr
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
30
V
ID = 250µA, referenced to 25°C
18 mV/°C
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
1
±100
µA
nA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250µA
1.0 1.7 3.0
V
ID = 250µA, referenced to 25°C
-7 mV/°C
VGS = 10V, ID = 28A
VGS = 4.5V, ID = 24A
VGS = 10V, ID = 28A, TJ = 125°C
VDD = 10V, ID = 28A
1.6 2.0
2.2 3.0 m
2.2 3.0
207 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
4825
2365
290
1.1
6420
3145
435
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15V, ID = 28A,
VGS = 10V, RGEN = 6
VGS = 0V to 10V
VGS = 0V to 4.5V
VDD = 15V,
ID = 28A
17 31 ns
10 20 ns
45 72 ns
7 14 ns
71 100 nC
33 47 nC
13 nC
9 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 2.1A (Note 3)
VGS = 0V, IS = 28A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 28A, di/dt = 100A/µs
0.7 1.2
V
0.8 1.2
V
55 88 ns
42 68 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
2. Starting TJ = 25°C, L = 3mH, IAS = 22A, VDD = 30V, VGS = 10V.
3. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
©2007 Fairchild Semiconductor Corporation
FDMS8662 Rev.C1
2
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/


Part Number FDMS8662
Description N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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