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FDMS8660AS - N-Channel MOSFET

General Description

The FDMS8660AS has been designed to minimize losses in power conversion application.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Key Features

  • Max rDS(on) = 2.1m: at VGS = 10V, ID = 28A.
  • Max rDS(on) = 3.1m: at VGS = 4.5V, ID = 22A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • SyncFET Schottky Body Diode.
  • MSL1 robust package design.
  • RoHS Compliant ® TM tm  General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS8660AS N-Channel PowerTrench® SyncFETTM May 2009 FDMS8660AS N-Channel PowerTrench SyncFET 30V, 49A, 2.1m: Features „ Max rDS(on) = 2.1m: at VGS = 10V, ID = 28A „ Max rDS(on) = 3.1m: at VGS = 4.5V, ID = 22A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ RoHS Compliant ® TM tm  General Description The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.