FDMS8660AS Datasheet | Fairchild Semiconductor

Features - Max r DS(on) = 2.1m: at VGS = 10V, ID = 28A - Max r DS(on) = 3.1m: at VGS = 4.5V, ID = 22A - Advanced Package and Silicon bination for low r DS(on) and high efficiency - Sync FET Schottky Body Diode - MSL1 robust package design - Ro HS pliant ® TM tm General Description The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications - Synchronous Rectifier for DC/DC Converters - Notebook Vcore/ GPU low side switch - Networking Point of Load low side switch - Tele secondary side rectification Top Bottom S Pin 1 S 5 6 7 8 4 3 2 1 Power 56 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) (Note 2) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 30 ±20 49 179 28 200 726 104 2.5 -55 to +150 m J W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.2 50 °C/W Package Marking and Ordering Information Device Marking FDMS8660AS Device FDMS8660AS Package Power 56 Reel Size 13’’ Tape Width 12mm Quantity 3000units ©2009 Fairchild Semiconductor Corporation FDMS8660AS Rev.C1 .fairchildsemi. Free Datasheet http://../ FDMS8660AS N-Channel Power Trench® Sync FETTM Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics...