FDMS8660S Datasheet | Fairchild Semiconductor

Features General Description - Max r DS(on) = 2.4mΩ at VGS = 10V, ID = 25A - Max r DS(on) = 3.5mΩ at VGS = 4.5V, ID = 21A - Advanced Package and Silicon bination for low RDS(ON) and high efficiency - Sync FET Schottky Body Diode - MSL1 robust package design - Ro HS pliant tm The FDMS8660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been bined to offer the lowest RDS(ON) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Application Synchronous Rectifier for DC/DC Converters - Notebook Vcore/ GPU low side switch - Networking Point of Load low side switch - Tele secondary side rectification Pin 1 S S 4 3 2 1 6 7 D MLP5x6 (Bottom view) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 30 ±20 40 147 25 200 83 2.5 -55 to +150 W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.5 50 °C/W Package Marking and Ordering Information Device Marking FDMS8660S Device FDMS8660S Package MLP5X6 Reel Size 13’’ Tape Width 12mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDMS8660S Rev.C (W) .fairchildsemi. FDMS8660S N-Channel Power Trench® Sync FETTM Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current...