FDMS8660S Overview
Max rDS(on) = 2.4mΩ at VGS = 10V, ID = 25A Max rDS(on) = 3.5mΩ at VGS = 4.5V, ID = 21A Advanced Package and Silicon bination for low RDS(ON) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design RoHS pliant tm The FDMS8660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been bined to offer the lowest...
FDMS8660S Key Features
- Max rDS(on) = 2.4mΩ at VGS = 10V, ID = 25A
- Max rDS(on) = 3.5mΩ at VGS = 4.5V, ID = 21A
- Advanced Package and Silicon bination for low RDS(ON) and high efficiency
- SyncFET Schottky Body Diode
- MSL1 robust package design
- RoHS pliant