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FDMS86101 - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 13.5

Key Features

  • General.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS86101 N-Channel PowerTrench® MOSFET October 2012 FDMS86101 N-Channel PowerTrench® MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.