FDMS86101
Description
This N-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Key Features
- Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A
- Max RDS(on) = 13.5 mW at VGS = 6 V, ID = 9.5 A
- Advanced Package and Silicon bination for Low RDS(on) and High Efficiency
- MSL1 Robust Package Design
- 100% UIL Tested
- 100% Rg Tested
- These Devices are Pb-Free and are RoHS compliant
