Description
This N
Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH® process that has been especially tailored to minimize the on
state resistance and yet maintain superior switching performance.
Features
- Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A.
- Max RDS(on) = 13.5 mW at VGS = 6 V, ID = 9.5 A.
- Advanced Package and Silicon Combination for Low RDS(on) and
High Efficiency.
- MSL1 Robust Package Design.
- 100% UIL Tested.
- 100% Rg Tested.
- These Devices are Pb.
- Free and are RoHS Compliant.
FDMS86101 Datasheet
