FDMS86105 Datasheet | Fairchild Semiconductor

Description

„ Shielded Gate MOSFET Technology „ Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A „ Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A „ Advanced package and silicon bination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.