FDMS86104
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A
- Max rDS(on) = 39 mΩ at VGS = 6 V, ID = 5.5 A
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
