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FDMS86102LZ - N-Channel MOSFET

General Description

Shielded Gate MOSFET Technology Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A HBM ESD protection level > 6 KV typical (Note 4) 100% UIL Tested RoHS Compliant This N-Channel logic Level MOSFETs

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS86102LZ N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86102LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 22 A, 25 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A „ HBM ESD protection level > 6 KV typical (Note 4) „ 100% UIL Tested „ RoHS Compliant This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.