FDMS86102LZ Description
Shielded Gate MOSFET Technology Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A HBM ESD protection level > 6 KV typical (Note 4) 100% UIL Tested RoHS pliant This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state...
FDMS86102LZ Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A
- Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A
- HBM ESD protection level > 6 KV typical (Note 4)
- 100% UIL Tested
- RoHS pliant