FDMS86102LZ Datasheet | Fairchild Semiconductor

FDMS86102LZ N-Channel Shielded Gate PowerTrench® MOSFET October 2014 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 22 A, 25 mΩ Features General Description - Shielded Gate MOSFET Technology - Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A - Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A - HBM ESD protection level > 6 KV typical (Note 4) - 100% UIL Tested - RoHS pliant This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD...