FDMS86101A
Description
Shielded Gate MOSFET Technology - Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A - Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A - Advanced Package and Silicon bination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
