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FDMS86103L Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDMS86103L N-Channel Shielded Gate PowerTrench® MOSFET FDMS86103L N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 81 A, 8 mΩ September.

General Description

„ Shielded Gate MOSFET Technology „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

„ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant Application „ DC-DC Conversion Top Bottom Pin 1 S S S D S G S D D D D D Power 56 S D G D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.

Key Features

  • General.

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