FDMS86103L Description
Shielded Gate MOSFET Technology Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A Advanced Package and Silicon bination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet...
FDMS86103L Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A
- Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant
- DC-DC Conversion
- Continuous -Pulsed
- 55 to +150