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FDMS86101DC - N-Channel MOSFET

General Description

This N

POWERTRENCH® process that incorporates Shielded Gate technology.

Key Features

  • Shielded Gate MOSFET Technology.
  • DUAL COOL Top Side Cooling PQFN package.
  • Max RDS(on) = 7.5 mW at VGS = 10 V, ID = 14.5 A.
  • Max RDS(on) = 12 mW at VGS = 6 V, ID = 11.5 A.
  • High performance technology for extremely low RDS(on).
  • 100% UIL Tested.
  • RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET - N-Channel, POWERTRENCH), DUAL COOL) 56 Shielded Gate 100 V, 60 A, 7.5 mW FDMS86101DC General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. Features • Shielded Gate MOSFET Technology • DUAL COOL Top Side Cooling PQFN package • Max RDS(on) = 7.5 mW at VGS = 10 V, ID = 14.5 A • Max RDS(on) = 12 mW at VGS = 6 V, ID = 11.