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FDMS8662 - N-Channel MOSFET

General Description

Max rDS(on) = 2.0m: at VGS = 10V, ID = 28A Max rDS(on) = 3.0m: at VGS = 4.5V, ID = 24A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design RoHS Compliant The FDMS8662 has been designed to minimize

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS8662 N-Channel PowerTrench® MOSFET May 2009 FDMS8662 tm N-Channel PowerTrench® MOSFET 30V, 49A, 2.0m: Features General Description „ Max rDS(on) = 2.0m: at VGS = 10V, ID = 28A „ Max rDS(on) = 3.0m: at VGS = 4.5V, ID = 24A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ RoHS Compliant The FDMS8662 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.