Datasheet Details
| Part number | FDN8601 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 181.80 KB |
| Description | MOSFET |
| Datasheet | FDN8601-FairchildSemiconductor.pdf |
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Overview: FDN8601 N-Channel PowerTrench® MOSFET FDN8601 N-Channel PowerTrench® MOSFET 100 V, 2.
| Part number | FDN8601 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 181.80 KB |
| Description | MOSFET |
| Datasheet | FDN8601-FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications Primary DC-DC Switch Load Switch RoHS Compliant MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FDN8601 | N-Channel MOSFET | ON Semiconductor |
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