FDN8601 Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.
FDN8601 Key Features
- Max rDS(on) = 109 mW at VGS = 10 V, ID = 1.5 A
- Max rDS(on) = 175 mW at VGS = 6 V, ID = 1.2 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
- Fast Switching Speed
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and is RoHS pliant