FDN8601 - N-Channel MOSFET

onsemi

General Description

This N

POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.

Key Features

Max rDS(on) = 109 mW at VGS = 10 V, ID = 1.5 A.
Max rDS(on) = 175 mW at VGS = 6 V, ID = 1.2 A.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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FDN8601 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDN8601
Manufacturer	onsemi
File Size	327.58 KB
Description	N-Channel MOSFET
Datasheet	FDN8601 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 100 V, 2.7 A, 109 mW FDN8601 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness. Features • Max rDS(on) = 109 mW at VGS = 10 V, ID = 1.5 A • Max rDS(on) = 175 mW at VGS = 6 V, ID = 1.