Datasheet Details
| Part number | FDN86265P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 219.87 KB |
| Description | MOSFET |
| Datasheet | FDN86265P-FairchildSemiconductor.pdf |
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Overview: FDN86265P P-Channel PowerTrench® MOSFET May 2014 FDN86265P P-Channel PowerTrench® MOSFET -150 V, -0.8 A, 1.
| Part number | FDN86265P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 219.87 KB |
| Description | MOSFET |
| Datasheet | FDN86265P-FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg This product is optimised for fast switching applications as well as load switch applications 100% UIL tested RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance.
Applications Active Clamp Switch Load Switch MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Ra
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FDN86265P | P-Channel MOSFET | ON Semiconductor |
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