FDN86265P Key Features
- Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A
- Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A
- Very low RDS-on mid voltage P-channel silicon technology
- This product is optimised for fast switching
| Manufacturer | Part Number | Description |
|---|---|---|
| FDN86265P | P-Channel MOSFET |