FDN86265P
Description
This P-Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that has been optimized for the on-state resistance and yet maintain superior switching performance.
Key Features
- Max rDS(on) = 1.2 W at VGS = -10 V, ID = -0.8 A Max rDS(on) = 1.4 W at VGS = -6 V, ID = -0.7 A
- Very Low RDS-on Mid Voltage P-Channel Silicon Technology Optimised for Low Qg
- This Product is Optimised for Fast Switching Applications as Well as Load Switch Applications
- 100% UIL Tested
- Pb-Free, Halide Free and RoHS pliant
- HBM ESD Level Class 0B, CDM ESD Level Class C3 (Note 4)
Applications
- Load Switch
