Datasheet Details
| Part number | FDN86501LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 593.69 KB |
| Description | MOSFET |
| Datasheet | FDN86501LZ-FairchildSemiconductor.pdf |
|
|
Overview: FDN86501LZ N-Channel Shielded Gate PowerTrench® MOSFET October 2015 FDN86501LZ N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 2.
| Part number | FDN86501LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 593.69 KB |
| Description | MOSFET |
| Datasheet | FDN86501LZ-FairchildSemiconductor.pdf |
|
|
|
Shielded Gate MOSFET Technology Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A Max rDS(on) = 173 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for rDS(on), switching performance and ruggedness.
Applications Primary DC-DC Switch Load Switch RoHS Compliant MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Compare FDN86501LZ distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDN86501LZ | N-Channel MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
| FDN8601 | MOSFET |
| FDN86246 | MOSFET |
| FDN86265P | MOSFET |
| FDN302P | P-Channel MOSFET |
| FDN304P | P-Channel MOSFET |
| FDN304PZ | P-Channel MOSFET |
| FDN306P | P-Channel MOSFET |
| FDN308P | P-Channel MOSFET |
| FDN327N | N-Channel MOSFET |
| FDN335N | N-Channel MOSFET |