FDN86501LZ - N-Channel MOSFET

Product Overview

ON Semiconductor

Part number	FDN86501LZ
Manufacturer	ON Semiconductor
File Size	356.27 KB
Description	N-Channel MOSFET
Datasheet	FDN86501LZ Datasheet
Additional preview pages of the FDN86501LZ datasheet.

This N

POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

Shielded Gate MOSFET Technology.
Max rDS(on) = 116 mW at VGS = 10 V, ID = 2.6 A.
Max rDS(on) = 173 mW at VGS = 4.5 V, ID = 2.1 A.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 25, 2023 |