FDN86501LZ Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
FDN86501LZ Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 116 mW at VGS = 10 V, ID = 2.6 A
- Max rDS(on) = 173 mW at VGS = 4.5 V, ID = 2.1 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
- Fast Switching Speed
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and is RoHS pliant