Datasheet4U Logo Datasheet4U.com

FDN86501LZ - N-Channel MOSFET

General Description

This N

POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 116 mW at VGS = 10 V, ID = 2.6 A.
  • Max rDS(on) = 173 mW at VGS = 4.5 V, ID = 2.1 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDN86501LZ MOSFET Fairchild Semiconductor
FDN8601 MOSFET Fairchild Semiconductor
FDN8601 N-Channel MOSFET TY Semiconductor
FDN86246 MOSFET Fairchild Semiconductor
FDN86265P MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDN8601 N-Channel MOSFET
FDN86246 N-Channel MOSFET
FDN86265P P-Channel MOSFET
FDN028N20 N-Channel MOSFET
FDN302P P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 60 V, 2.6 A, 116 mW FDN86501LZ General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Features • Shielded Gate MOSFET Technology • Max rDS(on) = 116 mW at VGS = 10 V, ID = 2.6 A • Max rDS(on) = 173 mW at VGS = 4.5 V, ID = 2.