FDN86501LZ Overview
Shielded Gate MOSFET Technology Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A Max rDS(on) = 173 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process...
FDN86501LZ Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A
- Max rDS(on) = 173 mΩ at VGS = 4.5 V, ID = 2.1 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used
- Fast switching speed
- 100% UIL tested
