FDN86501LZ Datasheet | Fairchild Semiconductor

FDN86501LZ N-Channel Shielded Gate Power Trench® MOSFET October 2015 N-Channel Shielded Gate Power Trench® MOSFET 60 V, 2.6 A, 116 mΩ Features General Description - Shielded Gate MOSFET Technology - Max r DS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A - Max r DS(on) = 173 mΩ at VGS = 4.5 V, ID = 2.1 A - High performance trench technology for extremely low r DS(on) - High power and current handling capability in a widely used surface mount package - Fast switching speed - 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for r DS(on), switching performance and ruggedness. Applications - Primary DC-DC Switch - Load Switch - Ro HS pliant MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS VGS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Single Pulse...