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FDN86501LZ - MOSFET

General Description

Shielded Gate MOSFET Technology Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A Max rDS(on) = 173 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used s

Key Features

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FDN86501LZ N-Channel Shielded Gate PowerTrench® MOSFET October 2015 FDN86501LZ N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 2.6 A, 116 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A „ Max rDS(on) = 173 mΩ at VGS = 4.5 V, ID = 2.1 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.