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FDP030N06B_F102 MOSFET

FDP030N06B_F102 Description

FDP030N06B_F102 * N-Channel PowerTrench® MOSFET FDP030N06B_F102 N-Channel PowerTrench® MOSFET 60 V, 195 A, 3.1 mΩ November 2013 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.

FDP030N06B_F102 Features

* RDS(on) = 2.67 mΩ (Typ. ) @ VGS = 10 V, ID = 100 A
* Low FOM RDS(on)
* QG
* Low Reverse-Recovery Charge, Qrr = 78 nC
* Soft Reverse-Recovery Body Diode
* Enables High Efficiency in Synchronous Rectification
* Fast Switching Speed
* 100% UI

FDP030N06B_F102 Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
* Renewable System D GDS TO-220 G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS d

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