FDP030N06B_F102
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Key Features
- RDS(on) = 2.67 mΩ (Typ.) @ VGS = 10 V, ID = 100 A
- Low FOM RDS(on) * QG
- Low Reverse-Recovery Charge, Qrr = 78 nC
- Soft Reverse-Recovery Body Diode
- Enables High Efficiency in Synchronous Rectification
- Fast Switching Speed
- 100% UIL Tested
- RoHS compliant
