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FDP053N08B — N-Channel PowerTrench® MOSFET
FDP053N08B
N-Channel PowerTrench® MOSFET
80 V, 120 A, 5.3 mΩ
June 2014
Features
• RDS(on) = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 62.5 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.