Datasheet Details
| Part number | FDP2614 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 0.96 MB |
| Description | 200V N-Channel MOSFET |
| Download | FDP2614 Download (PDF) |
|
|
| Part number | FDP2614 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 0.96 MB |
| Description | 200V N-Channel MOSFET |
| Download | FDP2614 Download (PDF) |
|
|
|
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications • Consumer Appliances • Synchronous Rectification • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS VGS ID IDM EAS dv/dt PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 1) (Note 2) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDP2614 — N-Channel PowerTrench® MOSFET October 2013 FDP2614 N-Channel PowerTrench® MOSFET 200 V, 62 A, 27.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDP2614 | N-Channel MOSFET | INCHANGE |
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