* RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench technology for Extremely Low RDS(on).

* Consumer Appliances
* Synchronous Rectification
* Battery Protection Circuit
* Motor Drives and Uninte.

This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications
* Consumer Appliances
* S.

FDP2670

FDP26N40

FDP20AN06A0

FDP20N40

FDP20N50

FDP20N50F

FDP22N50N

FDP24AN06LA0

FDP24N40

FDP2532

FDP2552

FDP2570

FDP2572